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Future
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1996-04-15
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638b
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22 lines
2DINESE, Vers. 1.0
Future plans.
1. Include void regions.
2. Include angular dependent deposition rate for Directional deposition processes.
3. Include a non-uniform flux distribution for Directional (etching and deposition) processes.
4. Include a selective deposition process.
5. Introduce user definable segment length limits and minimum thickness criterion.
6. Steadily develop more elaborate lithographic processes.
7. Develop more flexible graphical tools for mask as well as for region definition.
8. Improve the interface.
The extent of this future development will, of course, depend on the interest in the program.